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The ART of Passive RF Components:
Attenuators, Resistors, Terminations on Aluminium nitride (AlN) and Beryllium oxide (BeO).
Overview passive components.
Download here the Barry catalogue of standard resistive components.
RF Attenuators
RF Attenuator Chips
- SMD attenuators in sizes from 0405 to 3737
- in T- or Pi-configuration
- attenuation values 0dB, 1dB, 2dB, 3dB, 5dB, 6dB, 10dB, 20dB, 25dB, 30dB, 32dB
- frequency range up to 30GHz in size 0904
- Flip-Chip attenuators for wire bonding
- symmetrical Pi-attenuators up to 150W power dissipation
RF Attenuators leaded
- RF attenuators leaded on AlN and BeO substrates up to 4GHz or 250W
- attenuation values 0dB, 1dB, 2dB, 3dB, 5dB, 6dB, 10dB, 20dB, 25dB, 30dB
RF Attenuators with Flange
- RF-Attenuators with Silver plated Copper flange
- with Aluminium nitride (AlN) substrate up to 800W
- with Beryllium oxide (BeO) substrate up to 3000W
- Highlight: 30dB attenuation, up to 800W at 4.5GHz
- attenuation values 0.5dB, 1dB, 1.5dB, 2dB, 2.5dB, 3dB, 4dB, 5dB, 6dB, 10dB, 15dB, 20dB, 25dB, 30dB, 31dB
RF Resistors for high Frequencies and high Power
Thick Film RF Chip Resistors
- low capacitance chip resistors in sizes from 0201 to 5050
- resistance values from 0.1Ohm to 1GOhm, 0 Ohm jumpers available
- tolerances to 1%
- temperature range -55°C to 150°C
- solderable or wire bondable or for Epoxy die attach
- various terminal configurations from full wraparound to single-sided
- on Aluminium oxide (Al2O3) substrate up to 80W CW power dissipation
- on Aluminium nitride (AlN) substrate up to 270W CW power dissipation
- on eryllium oxide (BeO) substrate up to 800W CW power dissipation
Non-magnetic Thick Film Chip Resistors for MRI
- non-magnetic SMD-resistors in sizes from 0202 to 5050
- on Al2O3, AlN, or BeO, resistance values and power dissipation as above
- solder or Epoxy attachment
- RoHS compliant Palladium-Silver terminations
- on Aluminium nitride (AlN) substrate up to 270W CW power dissipation
- on Beryllium oxide (BeO) substrate up to 150W CW power dissipation
Flip Chip Resistors for highest Frequencies
up to 60GHz
- Flip-chip resistors in sizes from 0201 to 2335, up to 50W power dissipation
- with back metallisation in sizes from 0402 to 5050, up to 400W power dissipation
- single-sided for wire bonding or face (film) side down with solder or epoxy mount.
- metallisations: Gold, Tin-Lead over Nickel-Gold, Tin over Nickel-Gold or Gold on PtPdAU
Thick Film Resistors with Flange for high RF Power
- low parasitic capacitance values
- resistance values 1Ohm to 1kOhm
- temperature range -55°C to 150°C
- standard tolerances ±5%
- on BeO 20W up to 1200W CW power
- on AlN 10W up to 250W CW power
- all are RoHS compliant
Thick Film Resistors leaded for high RF Power
- on Aluminium nitride (AlN) up to 150W, on Beryllium oxide (BeO) up to 200W
- standard resistance values 50Ω or 100Ω, models available from 0.5Ω to 20kΩ
- standard tolerances 1%
- temperature range -55°C to 150°C
- leads are Silver plated Copper
RF Terminations
Barry produces RF terminations as SMD, leaded and with flange.
RF Terminations Chips
in sizes from 0202 to 3737, to 60GHz or power dissipation up to 250WRF Terminations leaded
on AlN and BeO substrates up to 250WRF-Terminations with Silver plated Copper Flange
on AlN up to 800W, on BeO up to 1750W
Copper Tungsten Flange for highest Reliability
Barry has developped products with special copper tungsten (CuW) flange for highest reliability in pulsed amplifiers and
for large temperature variations. This Application Note explains the advantages.
The special requirements for resistors in pulsed applications are explained in this paper.
Customer specific Ceramic Products
Barry designs and produces customer specific ceramic products with and without resistive components.Here are the Design Guidelines for ceramic components.
Examples:
Water-cooled RF termination with 5kW power dissipation
Ceramic micro channel cooler (picture to the right)
Customer specific Thick-Film-substrates for Microwave and High-Rel-Applications
Barry produces precise thick film substratees for applications in RF (e.g. 5G microwave circuits), for defence and space according to customer drawings. Some examples are shown here.
Barry does qualifications for space applications
QFN-Packages for Microwave and Millimeterwave Applications
Barry has developped hermetically sealed QFN-packages
- Aluminium oxide (Al2O3, Alumina) or Aluminium nitride (AlN)
- JEDEC MO-220 footprints
- for microwave and millimetre wave applications up to 40GHz
- low insertion loss: DC to 18GHz: 0.5dB; 18GHz to 35GHz: 1.5dB
- RoHS compliant
- customer specifc versions can be developped for a few k pcs
| Size (quadratic) |
Pins | Configuration | JEDEC MO-220 type |
Model No. (data sheet) |
|---|---|---|---|---|
| 3mm | 12 | Bare Seal Ring | VEED-5 | QFN-3312-0500 |
| 3mm | 12 | Grounded Seal Ring | VEED-5 | QFN-3312-0501 |
| 3mm | 12 | Castellated Grounded Seal Ring |
VEED-5 | QFN-3312-0502 |
| 4mm | 20 | Bare Seal Ring | VGGD-5 | QFN-4420-0500 |
| 4mm | 20 | Grounded Seal Ring | VGGD-5 | QFN-4420-0501 |
| 4mm | 20 | Castellated Grounded Seal Ring |
VGGD-5 | QFN-4420-0502 |
| 5mm | 32 | Bare Seal Ring | VHHD-5 | QFN-5532-0500 |
| 5mm | 32 | Grounded Seal Ring | VHHD-5 | QFN-5532-0501 |
| 5mm | 32 | Castellated Grounded Seal Ring |
VHHD-5 | QFN-5532-0502 |
| 6mm | 36 | Bare Seal Ring | VJJD-5 | QFN-6636-0500 |
| 6mm | 36 | Grounded Seal Ring | VJJD-5 | QFN-6636-0501 |
| 6mm | 36 | Castellated Grounded Seal Ring |
VJJD-5 | QFN-6636-0502 |
| 7mm | 44 | Bare Seal Ring | VKKD-5 | QFN-7744-0500 |
| 7mm | 44 | Grounded Seal Ring | VKKD-5 | QFN-7744-0501 |
| 7mm | 44 | Castellated Grounded Seal Ring |
VKKD-5 | QFN-7744-0502 |
| 8mm | 48 | Bare Seal Ring | VLLD | QFN-8848-0500 |
| 8mm | 48 | Grounded Seal Ring | VLLD | QFN-8848-0501 |
| 8mm | 48 | Castellated Grounded Seal Ring |
VLLD | QFN-8848-0502 |
